? semiconductor components industries, llc, 2001 august, 2001 rev. 0 1 publication order number: ntp30n06/d ntp30n06, ntb30n06 power mosfet 30 amps, 60 volts nchannel to220 and d 2 pak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 60 vdc draintogate voltage (r gs = 10 m w ) v dgr 60 vdc gatetosource voltage continuous nonrepetitive (t p 10 ms) v gs v gs 20 30 vdc drain current continuous @ t a = 25 c continuous @ t a = 100 c single pulse (t p 10 m s) i d i d i dm 27 15 80 adc apk total power dissipation @ t a = 25 c derate above 25 c p d 88.2 0.59 w w/ c operating and storage temperature range t j , t stg 55 to +175 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 50 vdc, v gs = 10 vdc, l = 0.3 mh i l(pk) = 26 a, v ds = 60 vdc) e as 101 mj thermal resistance junctiontocase r q jc 1.7 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 30 amperes 60 volts r ds(on) = 42 m w device package shipping ordering information ntp30n06 to220ab 50 units/rail to220ab case 221a style 5 1 2 3 4 http://onsemi.com nchannel d s g marking diagrams & pin assignments ntx30n06 = device code x = p or b ll = location code y = year ww = work week ntx30n06 llyww 1 gate 3 source 4 drain 2 drain ntx30n06 llyww 1 gate 3 source 4 drain 2 drain 1 2 3 4 d 2 pak case 418b style 2 ntb30n06 d 2 pak 50 units/rail ntb30n06t4 d 2 pak 800/tape & reel
ntp30n06, ntb30n06 http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (note 1.) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 60 71.1 70 vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss 1.0 10 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 1.) gate threshold voltage (note 1.) (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 2.0 3.05 7.3 4.0 vdc mv/ c static draintosource onresistance (note 1.) (v gs = 10 vdc, i d = 15 adc) r ds(on) 35 42 m w static draintosource onvoltage (note 1.) (v gs = 10 vdc, i d = 30 adc) (v gs = 10 vdc, i d = 15 adc, t j = 150 c) v ds(on) 1.1 0.98 1.5 vdc forward transconductance (note 1.) (v ds = 7.0 vdc, i d = 15 adc) g fs 16 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 850 1200 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 250 350 transfer capacitance f = 1 . 0 mhz) c rss 68 100 switching characteristics (note 2.) turnon delay time t d(on) 11 25 ns rise time (v dd = 30 vdc, i d = 30 adc, t r 36 80 turnoff delay time (v dd 30 vdc , i d 30 adc , v gs = 10 vdc, r g = 9.1 w ) (note 1.) t d(off) 24 50 fall time t f 31 60 gate charge (v 48 vd i 30 ad q t 23.4 46 nc (v ds = 48 vdc, i d = 30 adc, v gs = 10 vdc ) ( note 1. ) q 1 5.1 v gs = 10 vdc) (note 1 . ) q 2 11 sourcedrain diode characteristics forward onvoltage (i s = 30 adc, v gs = 0 vdc) (note 1.) (i s = 30 adc, v gs = 0 vdc, t j = 150 c) v sd 1.03 1.05 1.15 vdc reverse recovery time (i 30 ad v 0 vd t rr 52 ns (i s = 30 adc, v gs = 0 vdc, di s /dt = 100 a/ m s ) ( note 1. ) t a 38 di s /dt = 100 a/ m s) (note 1 . ) t b 15 reverse recovery stored charge q rr 0.094 m c 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperatures.
ntp30n06, ntb30n06 http://onsemi.com 3 0 0.09 0.06 30 20 0 10 60 0.04 0.02 40 50 0.08 0.03 0.05 0.07 t j = 25 c t j = 55 c t j = 100 c v gs = 15 v 60 30 20 10 0 v ds , draintosource voltage (volts) i d , drain current (amps) v gs , gatetosource voltage (volts) i d , drain current (amps) i d , drain current (amps) i d , drain current (amps) r ds(on) , draintosource resistance ( w ) r ds(on) , draintosource resistance ( w ) t j , junction temperature ( c) v ds , draintosource voltage (volts) r ds(on) , draintosource resistance (normalized) i dss , leakage (na) 2.2 1.8 1.4 1.6 1.2 1 0.6 1 1000 10000 03 2 1 figure 1. onregion characteristics figure 2. transfer characteristics 0 0.09 0.06 30 20 0 10 60 figure 3. onresistance versus gatetosource voltage figure 4. onresistance versus drain current and gate voltage figure 5. onresistance variation with temperature figure 6. draintosource leakage current versus voltage 60 50 50 25 0 25 75 125 100 210 4 03040 20 10 50 60 40 30 20 10 0 6 175 150 0.8 45 6 9 v v ds 10 v t j = 25 c t j = 55 c t j = 100 c t j = 25 c t j = 55 c t j = 100 c v gs = 10 v v gs = 0 v t j = 150 c t j = 100 c i d = 15 a v gs = 10 v v gs = 10 v 7 v 8 0.04 0.02 10 6.5 v 6 v 5.5 v 4.5 v 40 50 50 40 50 0.08 5 v 8 v 0.03 0.05 0.07 2 100
ntp30n06, ntb30n06 http://onsemi.com 4 gatetosource or draintosource voltage (volts) c, capacitance (pf) q g , total gate charge (nc) v gs , gatetosource voltage (volts) r g , gate resistance ( w )v sd , sourcetodrain voltage (volts) i s , source current (amps) t, time (ns) v ds , draintosource voltage (volts) t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse draintosource avalanche energy (mj) 1000 100 1 0.1 1000 100 1 12 10 8 6 4 2 0 120 60 20 40 0 32 16 0 10 2400 10 1200 15 5 020 800 400 0 5 figure 7. capacitance variation figure 8. gatetosource and draintosource voltage versus total charge figure 9. resistive switching time variation versus gate resistance figure 10. diode forward voltage versus current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy versus starting junction temperature 25 0 8 4 1 10 100 0.6 0.76 0.68 0.92 1.16 0.1 10 100 1 25 125 150 100 75 175 50 0.84 10 24 1 i d = 30 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss v gs = 20 v single pulse t c = 25 c v ds = 30 v i d = 30 a v gs = 10 v v gs = 0 v t j = 25 c i d = 26 a t f t d(off) t d(on) t r r ds(on) limit q t q 2 q 1 10 ms 1 ms 100 m s dc v gs v ds thermal limit package limit 8 10 m s 1600 2000 12 16 24 10 80 100 20 1.08
ntp30n06, ntb30n06 http://onsemi.com 5 t, time (s) 1 0.1 110 0.1 0.01 0.0001 r(t), effective transient thermal resistance (normalized) 0.001 d = 0.5 0.2 0.1 0.05 0.01 single pulse r q jc (t) = r(t) r q jc d curves apply for power pulse train shown read time at t 1 t j(pk) t c = p (pk) r q jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 figure 13. thermal response figure 14. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b
ntp30n06, ntb30n06 http://onsemi.com 6 package dimensions to220 threelead to220ab case 221a09 issue aa style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
ntp30n06, ntb30n06 http://onsemi.com 7 package dimensions d 2 pak case 418b03 issue d style 2: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
ntp30n06, ntb30n06 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntp30n06/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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